Эта страничка о моём первом не удачном опыте
обновления BIOS (EEPROM SST39VF040). На своем компьютере, вернее на двух, я обновлял биос
много раз, и стал относится к предостережениям об опасности
пренебрежительно. Выкладываю здесь в необлагороженном виде. То есть, как только получилось, сразу бросил заниматься этим делом. Но хочу заверить, все работает. Неопрятный вид и не причесанный код, имеет только программа на компе. Программа для микроконтроллера проста и думаю понятна. Как использовать, жмем “Erase Chip” затем “Записать из файла” (нужную прошивку), потом “Прочитать в файл” и сравниваем по содержимому в Total Commander`e. Так же можно выбрать емкость программируемой микросхемы, после выбора, это значение надо записать в программатор нажав кнопку “Записать в прог.”. Схема. Как все это выглядело на деле (212 Kb). Файлы (417 Kb). На главную – StartCd.narod.ru |
startcd.narod.ru
Silicon Storage Technology SST39VF040-70-4C-NHE Даташит, SST39VF040-70-4C-NHE PDF, даташитов
| Другие PDF | недоступен. | |
| SST39VF040-70-4C-NHE Datasheet PDF : | ||
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
| Ссылка на страницу (HTML): 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 |
| Номер в каталоге | Описание (Функция) | ||
| NAND01BGR3A | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | |
| SST39SF040-45-4C-NHE-T | 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash | Microchip Technology | |
| M36W108AB | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| Lh38F016SUHT-10 | 16 Mbit(1 Mbit x 16, 2 Mbit x 8) 5V Single Voltage Flash Memory | Sharp Electronics | |
| M36W0R6040B0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package | STMicroelectronics | |
| Lh38F008SAT-K85 | 8 MBIT(1 MBIT x 8) FLASH MEMORY | Sharp Electronics | |
| M36W108B | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| M29W800DB70M1 | 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory | STMicroelectronics | |
| VS28F016SV | 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile™ MEMORY | Intel | |
| DD28F032SA | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile™ MEMORY | Intel |
English 한국어 简体中文 日本語 español
ru.datasheetbank.com
Silicon Storage Technology SST39VF040 Даташит, SST39VF040 PDF, даташитов
| Другие PDF | недоступен. | |
| SST39VF040 Datasheet PDF : | ||
PRODUCT DESCRIPTION
The SST39LF512, SST39LF010,SST39LF020, SST39LF040 and SST39VF512, SST39VF010,SST39VF020, SST39VF040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 ns for SST39VF512/010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing
– Internal VPPGeneration
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All devices are RoHS compliant
| Ссылка на страницу (HTML): 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 |
| Номер в каталоге | Описание (Функция) | производитель | |
| NAND01BGR3A | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | |
| SST39SF040-45-4C-NHE-T | 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash | Microchip Technology | |
| M36W108AB | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| Lh38F016SUHT-10 | 16 Mbit(1 Mbit x 16, 2 Mbit x 8) 5V Single Voltage Flash Memory | Sharp Electronics | |
| M36W0R6040B0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package | STMicroelectronics | |
| Lh38F008SAT-K85 | 8 MBIT(1 MBIT x 8) FLASH MEMORY | Sharp Electronics | |
| M36W108B | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| M29W800DB70M1 | 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory | STMicroelectronics | |
| VS28F016SV | 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile™ MEMORY | Intel | |
| DD28F032SA | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile™ MEMORY | Intel |
English 한국어 简体中文 日本語 español
ru.datasheetbank.com
Silicon Storage Technology SST39VF040-70-4C-NH Даташит, SST39VF040-70-4C-NH PDF, даташитов
| Другие PDF | недоступен. | |
| SST39VF040-70-4C-NH Datasheet PDF : | ||
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
| Ссылка на страницу (HTML): 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 |
| Номер в каталоге | Описание (Функция) | производитель | |
| NAND01BGR3A | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | |
| SST39SF040-45-4C-NHE-T | 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash | Microchip Technology | |
| M36W108AB | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| Lh38F016SUHT-10 | 16 Mbit(1 Mbit x 16, 2 Mbit x 8) 5V Single Voltage Flash Memory | Sharp Electronics | |
| M36W0R6040B0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package | STMicroelectronics | |
| Lh38F008SAT-K85 | 8 MBIT(1 MBIT x 8) FLASH MEMORY | Sharp Electronics | |
| M36W108B | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| M29W800DB70M1 | 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory | STMicroelectronics | |
| VS28F016SV | 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile™ MEMORY | Intel | |
| DD28F032SA | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile™ MEMORY | Intel |
English 한국어 简体中文 日本語 español
ru.datasheetbank.com
| производитель | Номер в каталоге | Компоненты Описание | Посмотреть |
 Silicon Storage Technology | SST39VF040 | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
 Microchip Technology | SST39VF040 | IC FLASH 2MBIT 70NS 32PLCC | |
Silicon Storage Technology | SST39VF040-70-4I-WH | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-45-4I-MH | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-70-4I-WK | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-45-4I-MM | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-70-4I-WM | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-45-4I-NH | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-45-4I-NK | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-45-4I-NM | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
Silicon Storage Technology | SST39VF040-45-4I-WH | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
ru.datasheetbank.com
Silicon Storage Technology SST39VF040-55-4C-NH Даташит, SST39VF040-55-4C-NH PDF, даташитов
| Другие PDF | недоступен. | |
| SST39VF040-55-4C-NH Datasheet PDF : | ||
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
| Ссылка на страницу (HTML): 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 |
| Номер в каталоге | Описание (Функция) | производитель | |
| NAND01BGR3A | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | STMicroelectronics | |
| SST39SF040-45-4C-NHE-T | 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash | Microchip Technology | |
| M36W108AB | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| Lh38F016SUHT-10 | 16 Mbit(1 Mbit x 16, 2 Mbit x 8) 5V Single Voltage Flash Memory | Sharp Electronics | |
| M36W0R6040B0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package | STMicroelectronics | |
| Lh38F008SAT-K85 | 8 MBIT(1 MBIT x 8) FLASH MEMORY | Sharp Electronics | |
| M36W108B | 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product | STMicroelectronics | |
| M29W800DB70M1 | 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory | STMicroelectronics | |
| VS28F016SV | 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile™ MEMORY | Intel | |
| DD28F032SA | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile™ MEMORY | Intel |
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ru.datasheetbank.com
