Fairchild Semiconductor FQPF10N20C Даташит, FQPF10N20C PDF, даташитов
| Другие PDF | недоступен. | |
| FQPF10N20C Datasheet PDF : | ||
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Features
• 9.5 A, 200 V, RDS(on)= 360 mΩ(Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested
| Номер в каталоге | Описание (Функция) | производитель | |
| STE140NF20D | N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package | STMicroelectronics | |
| FQD6N40C | N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω | ON Semiconductor | |
| BSS138P | 60 V, 360 mA N-channel Trench MOSFET | NXP Semiconductors. | |
| BSS138BK | 60 V, 360 mA N-channel Trench MOSFET | NXP Semiconductors. | |
| FQD2N60C | N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω | Kersemi Electronic Co., Ltd. | |
| PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | NXP Semiconductors. | |
| 8N60C | N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω | Unspecified | |
| PSMN3R0-30YLD | N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | NXP Semiconductors. | |
| SCT20N120 | Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™ | STMicroelectronics | |
| STh360N6F6-2 | N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package | STMicroelectronics |
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Fairchild Semiconductor 10N20C Даташит, 10N20C PDF, даташитов
| Другие PDF | недоступен. | |
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Features
• 9.5 A, 200 V, RDS(on)= 360 mΩ(Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested
| Номер в каталоге | Описание (Функция) | производитель | |
| STE140NF20D | N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package | STMicroelectronics | |
| FQD6N40C | N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω | ON Semiconductor | |
| BSS138P | 60 V, 360 mA N-channel Trench MOSFET | NXP Semiconductors. | |
| 60 V, 360 mA N-channel Trench MOSFET | NXP Semiconductors. | ||
| FQD2N60C | N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω | Kersemi Electronic Co., Ltd. | |
| PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | NXP Semiconductors. | |
| 8N60C | N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω | Unspecified | |
| PSMN3R0-30YLD | N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | NXP Semiconductors. | |
| SCT20N120 | Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™ | STMicroelectronics | |
| STh360N6F6-2 | STMicroelectronics |
English 한국어 简体中文 日本語 español
ru.datasheetbank.com
10N20C Datasheet PDF, Fairchild Semiconductor : …
| Other PDF | no available. |
| 10N20C Datasheet PDF : | |
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
• 9.5 A, 200 V, RDS(on)= 360 mΩ(Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested
| Part Name | Description | Manufacturer | |
| STE140NF20D | N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package | STMicroelectronics | |
| FQD6N40C | N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω | ON Semiconductor | |
| BSS138P | 60 V, 360 mA N-channel Trench MOSFET | NXP Semiconductors. | |
| BSS138BK | 60 V, 360 mA N-channel Trench MOSFET | NXP Semiconductors. | |
| FQD2N60C | N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω | Kersemi Electronic Co., Ltd. | |
| PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | NXP Semiconductors. | |
| 8N60C | N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω | Unspecified | |
| PSMN3R0-30YLD | N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | NXP Semiconductors. | |
| SCT20N120 | Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™ | STMicroelectronics | |
| STh360N6F6-2 | N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package | STMicroelectronics |
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