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Fairchild Semiconductor FQPF10N20C Даташит, FQPF10N20C PDF, даташитов

Другие PDF  недоступен.
FQPF10N20C Datasheet PDF :   

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

Features
• 9.5 A, 200 V, RDS(on)= 360 mΩ(Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested


Номер в каталогеОписание (Функция)
PDF
производитель
STE140NF20D N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package STMicroelectronics
FQD6N40C N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω ON Semiconductor
BSS138P 60 V, 360 mA N-channel Trench MOSFET NXP Semiconductors.
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
NXP Semiconductors.
FQD2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Kersemi Electronic Co., Ltd.
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology NXP Semiconductors.
8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Unspecified
PSMN3R0-30YLD
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
NXP Semiconductors.
SCT20N120 Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™ STMicroelectronics
STh360N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package STMicroelectronics

English 한국어 简体中文 日本語 español


ru.datasheetbank.com

Fairchild Semiconductor 10N20C Даташит, 10N20C PDF, даташитов

Другие PDF  недоступен.
10N20C Datasheet PDF :   

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

Features
• 9.5 A, 200 V, RDS(on)= 360 mΩ(Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested


Номер в каталогеОписание (Функция)PDFпроизводитель
STE140NF20D N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package STMicroelectronics
FQD6N40C N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω ON Semiconductor
BSS138P 60 V, 360 mA N-channel Trench MOSFET NXP Semiconductors.
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
NXP Semiconductors.
FQD2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Kersemi Electronic Co., Ltd.
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology NXP Semiconductors.
8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Unspecified
PSMN3R0-30YLD
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
NXP Semiconductors.
SCT20N120 Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™ STMicroelectronics
STh360N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package STMicroelectronics

English 한국어 简体中文 日本語 español


ru.datasheetbank.com

10N20C Datasheet PDF, Fairchild Semiconductor : ...

Other PDF  no available.
10N20C Datasheet PDF :   

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

Features
• 9.5 A, 200 V, RDS(on)= 360 mΩ(Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested


Part NameDescription
PDF
Manufacturer
STE140NF20D N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package STMicroelectronics
FQD6N40C N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω ON Semiconductor
BSS138P 60 V, 360 mA N-channel Trench MOSFET NXP Semiconductors.
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
NXP Semiconductors.
FQD2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Kersemi Electronic Co., Ltd.
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology NXP Semiconductors.
8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Unspecified
PSMN3R0-30YLD
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
NXP Semiconductors.
SCT20N120 Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™ STMicroelectronics
STh360N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package STMicroelectronics

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